High-Temperature Resistant Silicon Carbide Crucible - Pressureless Sintered SiC Crucible - 1pcs(Arc 68x62mm/100ml)

Silicon carbide crucibles are manufactured using a pressureless sintering process and are available in three shapes: cylinder, rectangle, and arc, with a dimensional tolerance of ±1 mm.Silicon carbide crucibles exhibit excellent high-temperature resistance, capable of withstanding temperatures up to 1650°C in an environment and reaching a maximum temperature of 2000°C under vacuum conditions.Density ≥ 3.10 g/cm³, porosity 0%, dense structure; hardness ( hardness 45N) 93, high hardness; Thermal expansion coefficient: 4.0×10\u207b\u2076/K at 20\u20131000°C, ensuring good thermal stability and controllable thermal deformation.Free of free silicon, it exhibits high strength, wear resistance, resistance, excellent thermal conductivity, and superior thermal shock resistance, making it suitable for applications such as high-temperature chemical reactions and semiconductor manufacturing.

• Exceptional high-temperature resistance, capable of withstanding temperatures up to 1650°C in and 2000°C in vacuum conditions.
• Manufactured using a pressureless sintering process, available in cylinder, rectangle, and arc shapes with a dimensional tolerance of ±1 mm.
• High density (≥ 3.10 g/cm³) and 0% porosity ensure a dense structure, providing superior durability and performance.
• Exhibits excellent thermal stability with a thermal expansion coefficient of 4.0×10⁻⁶/K at 20-1000°C, ensuring controllable thermal deformation.
• Free of free silicon, offering high strength, wear resistance, resistance, and excellent thermal conductivity, ideal for high-temperature chemical reactions and semiconductor applications.